BAS + ECE February 2015 - page 24

n Significantly decreased Write Amplification Factor (WAF)
n Increased 4K random write IOPS and performance
n Fastest response time and reduced write latency
n Intelligent Garbage Collection
n Adaptive Dynamic, Static and Global Wear Levelling
n Read Disturb Management
n Dynamic Data Refresh
n Reliable Write for MLC Flashes
n MLC aware Power Fail Management (PFM)
n Available for S8 and U8 Flash Memory controllers
Reliable NAND Storage Controllers
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